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insulated gate bipolar transistor 1 www.irf.com 03/27/12 v ces = 1200v i c = 60a, t c = 100c t j(max) =175c v ce(on) typ. = 1.7v features low v ce (on) trench igbt technology low switching losses maximum junction temperature 175 c square rbsoa 100% of the parts tested for i lm positive v ce (on) temperature co-efficient tight parameter distribution lead -free benefits high efficiency in a wide range of applications suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses rugged transient performance for increased reliability excellent current sharing in parallel operation e c g n-channel g c e gate collector emitter to-247ac IRG7PH42Upbf to-247ad IRG7PH42U-ep g c e c g c e c IRG7PH42Upbf IRG7PH42U-ep applications u.p.s welding solar inverter induction heating absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current (silicon limited) 90 i c @ t c = 100c continuous collector current (silicon limited) 60 i nominal nominal current 30 i cm pulse collector current, v ge = 15v 90 i lm clamped inductive load current, v ge = 20v 120 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 385 p d @ t c = 100c maximum power dissipation 192 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) to-247ac CCC CCC 0.39 r cs thermal resistance, case-to-sink (flat, greased surface) C C C0 . 2 4C C C r ja thermal resistance, junction-to-ambient (typical socket mount) CCC 40 CCC a w c/w
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2 www.irf.com IRG7PH42Upbf/IRG7PH42U-ep notes: v cc = 80% (v ces ), v ge = 20v, l = 22 h, r g = 10 pulse width 400 s; duty cycle 2%. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at t j of approximately 90c . calculated continuous current based on maximum allowable junctiontemperature. bond wire current limit is 78a. note that current limitations arising from heating of the device leads may occur withsome lead mounting arrangements. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 v v ge = 0v, i c = 100 a v (br)ces / t j temperature coeff. of breakdown voltage 1.2 v/c v ge = 0v, i c = 1ma (25c-150c) 1 . 72 . 0 i c = 30a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage 2.1 v i c = 30a, v ge = 15v, t j = 150c 2 . 2 i c = 30a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 3.0 6.0 v v ce = v ge , i c = 1ma v ge(th) / tj threshold voltage temp. coefficient -16 mv/c v ce = v ge , i c = 1ma (25c - 175c) gfe forward transconductance 32 s v ce = 50v, i c = 30a, pw = 80 s i ces collector-to-emitter leakage current 1 150 v ge = 0v, v ce = 1200v 7 0 0 v ge = 0v, v ce = 1200v, t j = 175c i ges gate-to-emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) 157 236 i c = 30a q ge gate-to-emitter charge (turn-on) 21 32 nc v ge = 15v q gc gate-to-collector charge (turn-on) 69 104 v cc = 600v e on turn-on switching loss 2105 2374 i c = 30a, v cc = 600v, v ge = 15v e off turn-off switching loss 1182 1424 j r g = 10 , l = 200 h,t j = 25c e total total switching loss 3287 3798 energy losses include tail & diode reve rse recovery t d(on) turn-on delay time 25 34 diode clamp the same as IRG7PH42Udpbf t r rise time 32 41 ns t d(off) turn-off delay time 229 271 t f fall time 63 86 e on turn-on switching loss 3186 i c = 30a, v cc = 600v, v ge =15v e off turn-off switching loss 2153 j r g =10 , l=200 h, t j = 175c e total total switching loss 5339 energy losses include tail & diode reverse r ecovery t d(on) turn-on delay time 20 diode clamp the same as IRG7PH42Udpbf t r rise time 31 ns t d(off) turn-off delay time 310 t f fall time 162 c ies input capacitance 3338 pf v ge = 0v c oes output capacitance 124 v cc = 30v c res reverse transfer capacitance 75 f = 1.0mhz i c = 120a rbsoa reverse bias safe operating area full square v cc = 960v, vp =1200v rg = 10 , v ge = +20v to 0v, t j =175c conditions a downloaded from: http:///
www.irf.com 3 IRG7PH42Upbf/IRG7PH42U-ep fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature fig. 4 - forward soa t c = 25c, t j 175c; v ge =15v fig. 5 - reverse bias soa t j = 175c; v ge =20v fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) 0 20 40 60 80 100 120 140 160 180 t c (c) 0 50 100 150 200 250 300 350 400 p t o t ( w ) 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 175c single pulse dc 0.1 1 10 100 f , frequency ( khz ) 0 10 20 30 40 50 60 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tsink = 90c gate drive as specified power dissipation = 95w 60% of rated voltage i ideal diodes square wave: 25 50 75 100 125 150 175 t c (c) 0 20 40 60 80 100 i c ( a ) downloaded from: http:///
4 www.irf.com IRG7PH42Upbf/IRG7PH42U-ep fig. 8 - typ. igbt output characteristics t j = 175c; tp = 20 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 175c fig. 9 - typical v ce vs. v ge t j = -40c fig. 6 - typ. igbt output characteristics t j = -40c; tp =20 s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20 s 4 8 12 16 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 4 8 12 16 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 4 8 12 16 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 024681 0 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v 024681 0 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v 024681 0 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v downloaded from: http:///
www.irf.com 5 IRG7PH42Upbf/IRG7PH42U-ep fig. 14 - typ. switching time vs. i c t j = 175c; l = 200 h; v ce = 600v, r g = 10 ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 200 h; v ce = 600v, i ce = 30a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l = 200 h; v ce = 600v, i ce = 30a; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 175c; l = 200 h; v ce = 600v, r g = 10 ; v ge = 15v fig. 12 - typ. transfer characteristics v ce = 50v; tp = 20 s 0 1 02 03 04 05 06 0 i c (a) 0 1000 2000 3000 4000 5000 6000 7000 e n e r g y ( j ) e off e on 0 10 20 30 40 50 60 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) td off t f td on t r 0 2 55 07 51 0 0 rg ( ) 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 e n e r g y ( j ) e off e on 0 20 40 60 80 100 r g ( ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) td off t f td on t r 4 6 8 10 12 v ge , gate-to-emitter voltage (v) 0 20 40 60 80 100 120 i c e , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 175c downloaded from: http:///
6 www.irf.com IRG7PH42Upbf/IRG7PH42U-ep fig 19. maximum transient thermal impedance, junction-to-case (igbt) to-247ac fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 18 - typical gate charge vs. v ge i ce = 30a; l = 600 h 0 25 50 75 100 125 150 175 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.1306 0.0003130.1752 0.002056 0.0814 0.008349 0.0031 0.0431 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres downloaded from: http:///
www.irf.com 7 IRG7PH42Upbf/IRG7PH42U-ep fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - switching loss circuit fig.c.t.4 - resistive load circuit fig.c.t.5 - bvces filter circuit 100k 22k dut d1 0.0075 g force c fo rce c sen se e fo rce e sen se l rg 80 v dut vclamped + - l rg vcc diode clamp dut / driver 1k vcc dut 0 l rg vcc dut r = vcc icm downloaded from: http:///
8 www.irf.com IRG7PH42Upbf/IRG7PH42U-ep fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 -100 0 100 200 300 400 500 600 700 800 900 -0.5 0 0.5 1 1.5 2 time( s) v ce (v) -10 0 10 20 30 40 50 60 70 80 90 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 600 700 800 900 9.3 9.5 9.7 9.9 10.1 10.3 time ( s) v ce (v) -10 0 10 20 30 40 50 60 70 80 90 i ce (a) test current 90% tes t cur rent 5% v ce 10% test current tr eon loss downloaded from: http:///
www.irf.com 9 IRG7PH42Upbf/IRG7PH42U-ep

to-247ac package is not recommended for surface mount application.

ye ar 1 = 2001 dat e code part number internat ional logo rectifier as s e mb l y 56 57 irfpe30 135h line h i ndi cates "l ead- f r ee" we e k 35 lot code in the assembly line "h" as s e mb l e d on ww 35, 2001 note: "p" in assembly line position example: wi t h as s e mb l y this is an irfpe30 lot code 5657 downloaded from: http:///
10 www.irf.com IRG7PH42Upbf/IRG7PH42U-ep

ir world headquarters: 101n.sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/2011 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on irs web site. to-247ad package is not recommended for surface mount application.

assembly year 0 = 2000 as s embled on ww 35, 2000 in the assembly line "h" example: t his is an irgp30b 120kd-e lot code 5657 with assembly part number dat e code int ernational rect ifier logo 035h 56 57 week 35 line h lot code note: "p" in as s embly line pos ition i ndi cates "l ead- f r ee" downloaded from: http:///

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